GOFORD GT080N10K

GOFORD · FETs & Power MOSFETs · MPN GT080N10K

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Specifications

Gate Charge(Qg)50nC
Drain to Source Voltage100V
Output Capacitance(Coss)380pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)6.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF
Vgs±20V

Technical details

N-Channel 100V 75A 100W Surface Mount TO-252

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