GOFORD GT080N10D5

GOFORD · FETs & Power MOSFETs · MPN GT080N10D5

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Specifications

Gate Charge(Qg)70nC
Drain to Source Voltage100V
Output Capacitance(Coss)315pF
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.65nF
Vgs±20V

Technical details

N-Channel 100V 75A 100W Surface Mount DFN5x6-8

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