GOFORD GT080N08D5

GOFORD · FETs & Power MOSFETs · MPN GT080N08D5

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Specifications

Gate Charge(Qg)39nC
Drain to Source Voltage85V
Output Capacitance(Coss)540pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.682nF
Vgs±20V

Technical details

N-Channel 85V 65A 69W Surface Mount DFN5x6-8L

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