GOFORD GT070N15T

GOFORD · FETs & Power MOSFETs · MPN GT070N15T

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Specifications

Gate Charge(Qg)89nC
Drain to Source Voltage150V
Output Capacitance(Coss)600pF
Current - Continuous Drain(Id)140A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation258W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)4.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.85nF
Vgs±20V

Technical details

N-Channel 150V 140A 400W Through Hole TO-220

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