GOFORD GT070N15Q

GOFORD · FETs & Power MOSFETs · MPN GT070N15Q

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)89nC
Output Capacitance(Coss)600pF
Current - Continuous Drain(Id)155A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation330W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)4.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.84nF
Vgs±20V

Technical details

N-Channel 150V 155A 330W Through Hole TO-247

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