GOFORD GT065P06T

GOFORD · FETs & Power MOSFETs · MPN GT065P06T

No reviews yet — be the first to review GOFORD GT065P06T.

Specifications

Gate Charge(Qg)62nC
Drain to Source Voltage60V
Output Capacitance(Coss)1.095nF
Current - Continuous Drain(Id)103A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation178W
Reverse Transfer Capacitance (Crss@Vds)62pF
RDS(on)6.2mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)5.335nF
Vgs±20V

Technical details

P-Channel 60V 82A 150W Through Hole TO-220

Related FETs & Power MOSFETs