GOFORD GT065P06M

GOFORD · FETs & Power MOSFETs · MPN GT065P06M

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)62nC
Output Capacitance(Coss)907pF
Current - Continuous Drain(Id)103A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation178W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)6.6mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)5.985nF
Vgs±20V

Technical details

P-Channel 60V 103A 178W Surface Mount TO-263

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