GOFORD GT065P06D5

GOFORD · FETs & Power MOSFETs · MPN GT065P06D5

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Specifications

Gate Charge(Qg)99nC
Drain to Source Voltage60V
Output Capacitance(Coss)907pF
Current - Continuous Drain(Id)103A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation178W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)5.9mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)5.985nF
Vgs±20V

Technical details

P-Channel 60V 103A 178W Surface Mount DFN5x6-8L

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