GOFORD · FETs & Power MOSFETs · MPN GT060N10T
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| Gate Charge(Qg) | 83nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 633pF |
| Current - Continuous Drain(Id) | 116A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 160W |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 4.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.365nF |
| Vgs | ±20V |
N-Channel 100V 120A 214W Through Hole TO-220