GOFORD GT060N04T

GOFORD · FETs & Power MOSFETs · MPN GT060N04T

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Specifications

Gate Charge(Qg)25nC
Drain to Source Voltage40V
Output Capacitance(Coss)650pF
Current - Continuous Drain(Id)62A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.28nF
Vgs±20V

Technical details

N-Channel 40V 60A 48W Through Hole TO-220

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