GOFORD GT060N04D52

GOFORD · FETs & Power MOSFETs · MPN GT060N04D52

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Specifications

Current - Continuous Drain(Id)62A
Pd - Power Dissipation20W
RDS(on)5.5mΩ@10V
Gate Threshold Voltage (Vgs(th))1.4V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)38pF
Number2 N-Channel
Input Capacitance(Ciss)1.276nF
Gate Charge(Qg)44nC
Vgs±20V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 40V 62A 20W Surface Mount DFN5x6-8L

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