GOFORD GT060N04D5

GOFORD · FETs & Power MOSFETs · MPN GT060N04D5

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Specifications

Gate Charge(Qg)25nC
Drain to Source Voltage40V
Output Capacitance(Coss)650pF
Current - Continuous Drain(Id)62A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.28nF
Vgs±20V

Technical details

N-Channel 40V 62A 20W Surface Mount DFN-8L(5x6)

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