GOFORD GT060N04D3

GOFORD · FETs & Power MOSFETs · MPN GT060N04D3

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Specifications

Gate Charge(Qg)20nC
Drain to Source Voltage40V
Output Capacitance(Coss)650pF
Current - Continuous Drain(Id)56A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.28nF
Vgs±20V

Technical details

N-Channel 40V 40A 24W Surface Mount DFN3x3-8L

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