GOFORD GT055N06K

GOFORD · FETs & Power MOSFETs · MPN GT055N06K

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)30nC
Output Capacitance(Coss)617pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation78W
RDS(on)3.9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)12pF
Number1 N-channel
Input Capacitance(Ciss)2.16nF
Vgs±20V

Technical details

N-Channel 60V 90A 78W Surface Mount TO-252

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