GOFORD · FETs & Power MOSFETs · MPN GT048N10T
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| Gate Charge(Qg) | 49nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.226nF |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 4.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.22nF |
| Vgs | ±20V |
N-Channel 100V 110A 150W Through Hole TO-220