GOFORD · FETs & Power MOSFETs · MPN GT048N10M
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| Output Capacitance(Coss) | 1.225nF |
|---|---|
| Pd - Power Dissipation | 150W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 68nC |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| RDS(on) | 4.7mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.22nF |
150W 100V 110A 1.7V 4.7mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS