GOFORD · FETs & Power MOSFETs · MPN GT045N10T
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| Gate Charge(Qg) | 78nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 700pF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 180W |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF |
| RDS(on) | 3.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.8nF |
| Vgs | ±20V |
N-Channel 100V 130A 156W Through Hole TO-220