GOFORD GT045N10D5

GOFORD · FETs & Power MOSFETs · MPN GT045N10D5

No reviews yet — be the first to review GOFORD GT045N10D5.

Specifications

Gate Charge(Qg)78nC
Drain to Source Voltage100V
Output Capacitance(Coss)700pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation180W
Reverse Transfer Capacitance (Crss@Vds)52pF
RDS(on)3.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.8nF
Vgs±20V

Technical details

N-Channel 100V 80A 85W Surface Mount DFN-8(5x6)

Related FETs & Power MOSFETs