GOFORD GT043N15T

GOFORD · FETs & Power MOSFETs · MPN GT043N15T

No reviews yet — be the first to review GOFORD GT043N15T.

Specifications

Output Capacitance(Coss)740pF
Pd - Power Dissipation275W
Configuration-
Drain to Source Voltage150V
Gate Charge(Qg)75nC
Current - Continuous Drain(Id)143A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.9V
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)4.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.05nF

Technical details

275W 150V 143A 2.9V 4.3mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs