GOFORD GT043N15F

GOFORD · FETs & Power MOSFETs · MPN GT043N15F

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Specifications

Output Capacitance(Coss)740pF
Pd - Power Dissipation150W
Configuration-
Drain to Source Voltage150V
Gate Charge(Qg)75nC
Current - Continuous Drain(Id)95A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.9V
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)4.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.05nF

Technical details

150W 150V 95A 2.9V 4.3mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS

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