GOFORD · FETs & Power MOSFETs · MPN GT042P06T
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| Gate Charge(Qg) | 305nC |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1.468nF |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 280W |
| Reverse Transfer Capacitance (Crss@Vds) | 365pF |
| RDS(on) | 3.7mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 9.151nF |
| Vgs | ±20V |
P-Channel 60V 160A 280W Through Hole TO-220