GOFORD · FETs & Power MOSFETs · MPN GT040N10T
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 100nC |
| Output Capacitance(Coss) | 755pF |
| Current - Continuous Drain(Id) | 140A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 3.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.92nF |
| Vgs | ±20V |
N-Channel 100V 140A 200W Through Hole TO-220