GOFORD GT040N04M

GOFORD · FETs & Power MOSFETs · MPN GT040N04M

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Specifications

Gate Charge(Qg)42nC
Drain to Source Voltage40V
Output Capacitance(Coss)720pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation82W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)3.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF
Vgs±20V

Technical details

N-Channel 40V 120A 82W Surface Mount TO-263

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