GOFORD GT036P06TL

GOFORD · FETs & Power MOSFETs · MPN GT036P06TL

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Specifications

Output Capacitance(Coss)1.7nF
Pd - Power Dissipation355W
Drain to Source Voltage60V
Configuration-
Gate Charge(Qg)200nC
Current - Continuous Drain(Id)220A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)2.8mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)12.8nF

Technical details

355W 60V 220A 1.6V 2.8mΩ@10V 1 P-Channel P-Channel TOLL-8L Single FETs, MOSFETs RoHS

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