GOFORD · FETs & Power MOSFETs · MPN GT036P06M
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| Output Capacitance(Coss) | 1.7nF |
|---|---|
| Pd - Power Dissipation | 325W |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Gate Charge(Qg) | 198nC |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 3.7mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 12.8nF |
325W 60V 180A 1.9V 3.7mΩ@10V 1 P-Channel P-Channel TO-263 Single FETs, MOSFETs RoHS