GOFORD GT035N12T

GOFORD · FETs & Power MOSFETs · MPN GT035N12T

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Specifications

Output Capacitance(Coss)860pF
Pd - Power Dissipation230W
Configuration-
Gate Charge(Qg)126nC
Drain to Source Voltage120V
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)3.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.335nF

Technical details

N-Channel 120V 180A 230W Through Hole TO-220

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