GOFORD GT035N12M

GOFORD · FETs & Power MOSFETs · MPN GT035N12M

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Specifications

Gate Charge(Qg)126nC
Drain to Source Voltage120V
Output Capacitance(Coss)860pF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation230W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)3.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.335nF
Vgs±20V

Technical details

N-Channel 120V 180A 230W Surface Mount TO-263

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