GOFORD GT030N08T

GOFORD · FETs & Power MOSFETs · MPN GT030N08T

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Specifications

Gate Charge(Qg)75nC
Drain to Source Voltage80V
Output Capacitance(Coss)900pF
Current - Continuous Drain(Id)155A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation140W
RDS(on)2.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)32pF
Number1 N-channel
Input Capacitance(Ciss)5.1nF
Vgs±20V

Technical details

80V 155A 1.5V 140W 2.7mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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