GOFORD GT025N06TL

GOFORD · FETs & Power MOSFETs · MPN GT025N06TL

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)101nC
Current - Continuous Drain(Id)200A
Output Capacitance(Coss)1.1nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation230W
RDS(on)2.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)54pF
Number1 N-channel
Input Capacitance(Ciss)5.02nF
Vgs±20V

Technical details

N-Channel 60V 200A 230W Surface Mount TOLL-8L

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