GOFORD GT025N06F

GOFORD · FETs & Power MOSFETs · MPN GT025N06F

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)70nC
Current - Continuous Drain(Id)120A
Output Capacitance(Coss)1.4nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)2.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.3nF
Vgs±20V

Technical details

N-Channel 60V 120A Through Hole TO-220F

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