GOFORD GT025N06D5

GOFORD · FETs & Power MOSFETs · MPN GT025N06D5

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Specifications

Gate Charge(Qg)110nC
Drain to Source Voltage60V
Output Capacitance(Coss)1.4nF
Current - Continuous Drain(Id)170A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation215W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.3nF
Vgs±20V

Technical details

N-Channel 60V 170A 125W Surface Mount DFN5x6-8L

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