GOFORD GT025N06AQ

GOFORD · FETs & Power MOSFETs · MPN GT025N06AQ

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)70nC
Output Capacitance(Coss)1.35nF
Current - Continuous Drain(Id)175A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation220W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)2.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.4nF
Vgs±20V

Technical details

N-Channel 60V 175A 220W Through Hole TO-247

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