GOFORD GT025N06AM

GOFORD · FETs & Power MOSFETs · MPN GT025N06AM

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Specifications

Gate Charge(Qg)70nC
Drain to Source Voltage60V
Output Capacitance(Coss)1.347nF
Current - Continuous Drain(Id)170A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation215W
Reverse Transfer Capacitance (Crss@Vds)78pF
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.119nF
Vgs±20V

Technical details

N-Channel 60V 170A 215W Surface Mount TO-263

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