GOFORD GT023N10TL

GOFORD · FETs & Power MOSFETs · MPN GT023N10TL

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Specifications

Output Capacitance(Coss)2.718nF
Pd - Power Dissipation395W
Configuration-
Gate Charge(Qg)121nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)330A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)1.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.747nF

Technical details

N-Channel 100V 330A 506W Surface Mount TOLL-8L

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