GOFORD · FETs & Power MOSFETs · MPN GT023N10T
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| Gate Charge(Qg) | 121nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 226A |
| Output Capacitance(Coss) | 2.544nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF |
| RDS(on) | 2.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.139nF |
| Vgs | ±20V |
100V 226A 250W Through Hole TO-220