GOFORD · FETs & Power MOSFETs · MPN GT023N10M
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| Output Capacitance(Coss) | 3.042nF |
|---|---|
| Pd - Power Dissipation | 265W |
| Configuration | - |
| Gate Charge(Qg) | 137nC |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 226A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 2.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.148nF |
N-Channel 100V 226A 250W Surface Mount TO-263