GOFORD GT020N10TL

GOFORD · FETs & Power MOSFETs · MPN GT020N10TL

No reviews yet — be the first to review GOFORD GT020N10TL.

Specifications

Gate Charge(Qg)160nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)300A
Output Capacitance(Coss)13.7nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation330W
RDS(on)1.65mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)370pF
Number1 N-channel
Input Capacitance(Ciss)10.6nF
Vgs±20V

Technical details

N-Channel 100V 300A 330W Surface Mount TOLL-8L

Related FETs & Power MOSFETs