GOFORD · FETs & Power MOSFETs · MPN GT020N10T
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| Output Capacitance(Coss) | 1.355nF |
|---|---|
| Pd - Power Dissipation | 255W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 222nC |
| Current - Continuous Drain(Id) | 236A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| RDS(on) | 2.1mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.8nF |
255W 100V 236A 2.8V 2.1mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS