GOFORD · FETs & Power MOSFETs · MPN GT020N10M
No reviews yet — be the first to review GOFORD GT020N10M.
| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 160nC |
| Output Capacitance(Coss) | 1.37nF |
| Current - Continuous Drain(Id) | 250A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 278W |
| RDS(on) | 1.7mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 370pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.6nF |
| Vgs | ±20V |
100V 250A 2.8V 278W 1.7mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS