GOFORD GT020N04M

GOFORD · FETs & Power MOSFETs · MPN GT020N04M

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Specifications

Gate Charge(Qg)57nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)140A
Output Capacitance(Coss)1.465nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation85W
Reverse Transfer Capacitance (Crss@Vds)46pF
RDS(on)1.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.235nF
Vgs±20V

Technical details

N-Channel 40V 140A 85W Surface Mount TO-263

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