GOFORD GT019N04D5

GOFORD · FETs & Power MOSFETs · MPN GT019N04D5

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Specifications

Gate Charge(Qg)95nC
Drain to Source Voltage40V
Output Capacitance(Coss)541pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation63W
Reverse Transfer Capacitance (Crss@Vds)524pF
RDS(on)2.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.84nF
Vgs±20V

Technical details

N-Channel 40V 120A 120W Surface Mount DFN5x6-8L

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