GOFORD GT016N10TL

GOFORD · FETs & Power MOSFETs · MPN GT016N10TL

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Specifications

Gate Charge(Qg)165nC
Drain to Source Voltage100V
Output Capacitance(Coss)3.782nF
Current - Continuous Drain(Id)362A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation450W
Reverse Transfer Capacitance (Crss@Vds)585pF
RDS(on)1.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)10.037nF
Vgs±20V

Technical details

N-Channel 100V 362A 450W Surface Mount TOLL

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