GOFORD · FETs & Power MOSFETs · MPN GT016N10Q
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| Gate Charge(Qg) | 165nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 3.838nF |
| Current - Continuous Drain(Id) | 288A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 320W |
| Reverse Transfer Capacitance (Crss@Vds) | 565pF |
| RDS(on) | 1.65mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.53nF |
| Vgs | ±20V |
N-Channel 100V 288A 329W Through Hole TO-247