GOFORD GT015N10TL

GOFORD · FETs & Power MOSFETs · MPN GT015N10TL

No reviews yet — be the first to review GOFORD GT015N10TL.

Specifications

Drain to Source Voltage100V
Gate Charge(Qg)260nC
Output Capacitance(Coss)2nF
Current - Continuous Drain(Id)365A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.9V
Pd - Power Dissipation395W
Reverse Transfer Capacitance (Crss@Vds)360pF
RDS(on)1.15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)15nF
Vgs±20V

Technical details

N-Channel 100V 365A 395W Surface Mount TOLL-8L

Related FETs & Power MOSFETs