GOFORD GT014N04TL

GOFORD · FETs & Power MOSFETs · MPN GT014N04TL

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Specifications

Gate Charge(Qg)94nC
Drain to Source Voltage40V
Output Capacitance(Coss)1.856nF
Current - Continuous Drain(Id)275A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation139W
Reverse Transfer Capacitance (Crss@Vds)74pF
RDS(on)0.98mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.1nF
Vgs±20V

Technical details

40V 275A 1.7V 139W 0.98mΩ@10V 1 N-channel N-Channel TOLL-8L Single FETs, MOSFETs RoHS

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