GOFORD GT013N04TLH

GOFORD · FETs & Power MOSFETs · MPN GT013N04TLH

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Specifications

Gate Charge(Qg)84nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)285A
Output Capacitance(Coss)3.6nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.4nF
Vgs±20V

Technical details

N-Channel 40V 285A 156W Surface Mount TOLL-8L

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