GOFORD GT013N04T

GOFORD · FETs & Power MOSFETs · MPN GT013N04T

No reviews yet — be the first to review GOFORD GT013N04T.

Specifications

Gate Charge(Qg)50nC
Drain to Source Voltage40V
Output Capacitance(Coss)873pF
Current - Continuous Drain(Id)220A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)835pF
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.986nF
Vgs±20V

Technical details

N-Channel 40V 220A 90W Through Hole TO-220

Related FETs & Power MOSFETs