GOFORD · FETs & Power MOSFETs · MPN GT013N04D5M
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| Output Capacitance(Coss) | 3.7nF |
|---|---|
| Pd - Power Dissipation | 136W |
| Configuration | - |
| Gate Charge(Qg) | 88nC |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 262A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| RDS(on) | 1.2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.15nF |
136W 40V 262A 1.7V 1.2mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS