GOFORD GT013N04D5H

GOFORD · FETs & Power MOSFETs · MPN GT013N04D5H

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Specifications

Gate Charge(Qg)84nC
Drain to Source Voltage40V
Output Capacitance(Coss)3.7nF
Current - Continuous Drain(Id)260A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation135W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)1.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.3nF
Vgs±20V

Technical details

N-Channel 40V 260A 135W Surface Mount DFN5x6-8L

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