GOFORD GT013N04D5CH

GOFORD · FETs & Power MOSFETs · MPN GT013N04D5CH

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)84nC
Current - Continuous Drain(Id)270A
Output Capacitance(Coss)3.7nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation138W
RDS(on)0.82mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)130pF
Number1 N-channel
Input Capacitance(Ciss)5.3nF
Vgs±20V

Technical details

N-Channel 40V 270A 138W Surface Mount DFN5x6-8L

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